Transfer of 3D EBL fabricated microstructures from polymer to quartz and silicon
Reactive-ion etching (RIE) is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it. Reactive ion etching (RIE) - This is for plasma etching technology used in micro production. Technical specifications: etched with materials: Si, SiO 2 and SiN, etching gas: CF4, CHF3 and SF6, selectivity photoresist :> 02:01, selectivity Si layer:> 02:01.


Field of Science:
Diagnostic and measurement technologies, Smart environments and information technology
Request form