ICP RIE system PlasmaTherm Apex SLR is used for the reactive ion etching of a variety of materials, most commonly Si/SiO2. It is equipped with fluorine-based gases and a cryo-cooled electrode, which enabled deep reactive ion etching (DRIE) of silicon. ICP RIE systems have two independent RF power supplies: one controls capacitive coupled plasma and the resulting self-bias, whereas the other supplies power to an antenna coil, inducing an inductively coupled plasma. This type of setup decouples the plasma density control (ICP) from the ion energy (CCP), allowing to achieve much higher etch rates without sacrificing selectivity. 

The system is installed in a class ISO5 cleanroom.

• Gases: SF6, C4F8, CF4, O2
• Max flow rate: 100 sccm
• Max ICP Power: 1000 W
• Max CCP Power: 300 W
• Base pressure: ~5E-8 Torr
• Process pressure: 1 - 100 mTorr
• Electrode temperature range: -110ºC - 300ºC
• Maximum wafer size: 6"