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Results of equipment (42)

Description: Electron beam lithography, electron microscope, energy dispersive spectroscopy

Technical specification: Field emission cathode, acceleration voltage variable from 20 V to 30 kV, laser interferometer, dry vacuum system, sample size up to 102x102 mm, electron microscope, surface chemical analysis from Be (Z=4) to Am (95)

Usage area: Nanolithography, electron microscopy, surface chemical analysis

Keywords: Nanolithography, scanning electron microscopy, surface chemical analysis, EDX, EBL, EDS

Description: Optical microscope NIKON (analyzer)

Technical specification: Magnification up to x1200, uncertainty of measurements do not exceeds (0.1 L/500) µm, where L is length of the structure under measurement.

Usage area: Measurement of linear dimensions of the transparent structures in manual and automatic modes with high fidelity

Keywords: Optical microscope, manual and automatic modes

Description: UV-VIS spektrometer

Technical specification: UV-VIS spektrometer. Spekctral range 360-860 nm, spectral resolution 1.2 nm, USB2

Usage area: Reflection, transmission, absorption measurements in UV-VIS spectral range. Applied in refractive index kinetics measurement stand

Keywords: UV-VIS spectrometer

Description: The fiber-optic spectrometer AvaSpec-2048

Technical specification: Light source - deuterium and halogen. The spectral region 172-1100 nm, resolution - 1.4 nm. USB2

Usage area: Reflection, transmission, absorption measurements in UV-VIS-NIR spectral range. Liquids can be analyzed in the standard cell, hard transparent (measured transmission and the absorption) or vague (measured reflection) samples

Keywords: UV-VIS-NIR spektrometer

Description: Optical and fluorescence microscope

Technical specification: Wide field oculars, digital imaging, UV fluorescence source

Usage area: Optical and fluorescence microscopy

Keywords: Optical microscope, fluorescence microscope

Description: Lloyd`s mirror holographic lithography setup.

Technical specification: Loyd`s mirror holographic lithography setup. The setup is capable to pattern structures with periods less than 500 nm

Usage area: Holographic lithography, micro-fabrication

Keywords: Laser, UV, holographic lithography, periodical structures, diffraction gratings, interference lithography, lithography, one dimensional, two dimensional three dimensional

Description: Spincoater, hotplate and UV curing lamp for formation of thin films

Technical specification: Two step spin-coating process (first 2-18 s, second 3-60 s) with two different speed intervals (first 500-2500 rpm, second 1000-8000 rpm). Hot plate temperature 30-300 deg C, sample size up to 6 inch, temperature resolution 0.1 deg C. UV lamp has 4x6W bulbs, wavelengths 264 nm, 365 nm. The sample up to 4 inch is rotated at 6 rpm.

Usage area: Spin-coater, hotplate, UV curing, thin layer deposition

Keywords: spin-coater, hotplate, UV lamp, thin layers, spin coating, layer formation, UV hardening, UV cross linking, drying

Description: Atomic force microscope NT-206

Technical specification: operating modes: contact, tapping, non-contact. Lateral magnetic force microscopy. Static / Dynamic force spectroscopy. AFM characteristics: maximum scan field: 15x15μm; measurement matrix to 512x512 pixels, maximum height measurements are 2 micrometers, up to 15 mm in diameter and 5 mm high samples.

Usage area: For study the morphology and local mechanical properties of differents materials surfaces at the nano, micro-scale.

Keywords: AFM, scaning, morphology, topography

Description: Universal optical spectroscopy and laser microfabrications system

Technical specification: Yb:KGW laser wavelength is 1030 nm, power 4W, pulse duration 290 fs, energy >0.2 mJ. Fabrication can be performed employing focused first harmonic (1030 nm) second harmonic (515 nm) or third harmonic (3436 nm) of the laser. Fabrication with controlled period (0.8-1.3 um) interference field of second harmonic (515 nm) is alse available in the system. Microfabrication can be performed in 160x160 mm area with 300 nm positioning precision. Speed of the XY tables is up to 300 mm/s, sample wight up to 3 kg. The pump wavelength range of the spectroscopic system is 315-2600 nm, the probe wavelength range is 480-1100 nm. Time resolution 16.67 fs, length of the delay line 1,8 ns, absorbtion detection limit 0.5 mOD

Usage area: Material mikro-/nano- fabrication with focused beam and measurements of absorbtion kinetics.

Keywords: Femtosecond laser, ultra fast laser, laser microfabrication, micromachining, ablation, laser drilling, laser marking, laser engraving, galvoscanner, second harmonic, third harmonic, direct ablation with interference field, holographic lithography, 515, 315, 1030, kinetic spectroscopy, pump-probe spectroscopy, differential absorption spectrometer, differential absorption, ultra fast spectroscopy

Description: Energy dispersive X-Ray analysis

Technical specification: Detectable elements from Boron (5) to Americium (95). Energy resolution 133 eV (Mn K alfa). Spatial resolution < 1 um3. Thermoelectric cooling.

Usage area: Determination of chemical composition , elemnt mapping

Keywords: Chemical composition, energy dispersion, element mapping, microanalysis, x-ray energy dispersion spectrometer, chemical element analysis, chemical element distribution, EDS, EDX

Description: microwave plasma enhanced chemical vapor deposition system

Technical specification: plasma source diameter 6", power 6 kW frequeency 2.45 GHz homogeneous deposition area diameter 5 cm

Usage area: thin film and coating deposition

Keywords: thin film and coating deposition

Description: Quartz dilatometer OKB-5A14

Technical specification: temperatures up to 800 C, the dimension dependence from temperature automatic recording

Usage area: glass material thermal expansion study

Keywords: glass thermal expansion

Description: Fourier transform infrared spectrometer

Technical specification: Fourier transform infrared spectrometer spectra region 400-4000cm-1 Resolution - 1 cm -1. Measurement mode - transmittance, 30-degree reflection, diffuse reflection, total internal reflection (ATR)

Usage area: Characterization of molecules and mixtures, vibrational spectra identification. May be performed thin films, powders, liquid state materials research

Keywords: FTIR spektroskopy

Description: Device for galvanoplastic multiplication

Technical specification: Formation of Ni film on polymeric surface

Usage area: Fabrication of Ni replica matrix with submicron (nanometric) precision and high diffraction efficiency of the final product.

Keywords: Galvanoplastic

Description: vacuum evaporation unit

Technical specification: E-beam gun power up to 5 kW

Usage area: vacuum evaporation

Keywords: vacuum evaporation

Description: Device for replication of holograms

Technical specification: Formation of relief with submicron (nanometric) dimensions on polymer surface.

Usage area: Formation of micro-relief on polymer surface

Keywords: Micro-relief

Description: Rockwell hardness meter

Technical specification: loads 15,30,45 kgf

Usage area: hardness measurement

Keywords: hardness measurement

Description: dynamic microhardness meter

Technical specification: loads 0.1 – 2000 mN

Usage area: microhardness and Young modulus testing

Keywords: microhardness and Young modulus testing

Description: solar spectra simulator

Technical specification: AM1.5

Usage area: measurement of photovoltaic properties

Keywords: measurement of photovoltaic properties

Description: vacuum evaporation unit

Technical specification: E-beam gun power up to 5 kW

Usage area: vacuum evaporation

Keywords: vacuum evaporation

Description: RF reactive ion etching system

Technical specification: power 3kW, homogeneous etching area diamater 15 cm

Usage area: reactive ion etching, surface microfabrication

Keywords: reactive ion etching, surface microfabrication

Description: diamond like carbon ion beam synthesis system

Technical specification: ion energy 400-1000 eV

Usage area: diamond like carbon deposition

Keywords: diamond like carbon deposition

Description: ion etching system

Technical specification: homogeneous etching area diamater 8 cm

Usage area: ion beam etching, surface microfabrication

Keywords: ion beam etching, surface microfabrication

Description: vacuum evaporation unit

Technical specification: E-beam gun power up to 5 kW

Usage area: vacuum evaporation, magnetron sputtering

Keywords: vacuum evaporation, magnetron sputtering

Description: Spin coater for the formation of thin layers

Technical specification: Spin speed up to 10000 rpm, duration 1-999 s, temperature 50 - 250ºC, area up to 230x230 mm

Usage area: Thin film formation

Keywords: Spin coating, thin polimer films, photolithography, drying

Description: UV laser

Technical specification: Wavelength 375nm, power 15 mW

Usage area: Holographic lithography, micro-fabrication

Keywords: Laser, UV, holographic lithography, periodical structures, diffraction gratings, interference lithography, lithography, one dimensional, two dimensional three dimensional

Description: Device for multiplication of optical security marks MSM-1

Technical specification: The adhesive layer formation on silicone paper and multilayer polymeric film. Formation speed in the range of 1-6 m/min. Adhesive layer thichness in the range of 1-150 mm. Ability to cut out labels.

Usage area: Fabrication of optical document security intellectual property measures with micro-diffractive elements.

Keywords: Adhesive layer formation

Description: Atomic Absorption Spectrometer Perkin Elmer Model 403

Technical specification: double-beam spectrometer using the flame method. It can analyze about 30 heavy elements. The sensitivity of 0.05-0.1 ppm.

Usage area: used in many areas: water, soil and rock samples. Because of its simplicity, speed and accuracy of this method of analysis is one of the most commonly used in the determination of trace metals.

Keywords: concentration, quantitative analysis

Description: impedance analyzer

Technical specification: frequency 3 µHz-3 MHz. 2-3 elektrode system. Phase: 0,001 °. Sample diameter 16 mm. 2 measurement congurations: "in-plane"and "through-plane".

Usage area: investigations of electrical properties of dielectric films, testing of fuel cells

Keywords: investigations of electrical properties of dielectric films, testing of fuel cells

Description: Device for roughness measurement of mechanical surfaces

Technical specification: Measurement accuracy: 1.Ra: 0.03μm~6.3μm/1μ~250μ. 2.Rz: 0.2μm~50.0μm/8μ~999μ. 3.Ry/R max: 0.2μm~25μm/8μ~999μ. •Resolution: 0.01μm/1μ. •Measurement range 0.8mm/0.30”; ANSI 2RC Filter

Usage area: Surface roughness measurements

Keywords: Surface roughness measurements

Description: Langmuir-Blodgett trough and control system

Technical specification: Surface area – 400 cm2 Working area – 318 cm2 Volume – 1000-1050 cm3 Surface pressure sensor – Wilhelmi plate (error 0,1 mN/m)

Usage area: Langmuir-Blodgett trough is used to deposit single or multiple monolayers on a solid substrate.

Keywords: Langmuir-Blodgett trough, thin layers

Description: Universal surface analysis system for X-Ray photoelectron spectroscopy, ion scatering spectroscopy, reflection electron energy loss spectroscopy, and angle Resolved XPS (ARXPS)

Technical specification: Monochromatised X-Ray sorce (Al anaode). Elements detection limits from 0.1% to 5%. Lens-defined area lateral resolution from 20 µm to 900 µm. High-resolution parallel imaging spectra from areas down to ~ 5 µm. Elements detection limits from 0.1% to 5%. Sample heating up to 1000 K, sample cooling down to 77 K; vacuum better then 5*10-10 mB.

Usage area: Quantitative and qualitative surface analysis using X-Ray photoelectron spectroscopy, ion scattering spectroscopy, reflection electron energy loss spectroscopy, angle Resolved XPS (ARXPS) with Ar ion surface eching/cleaning possibility

Keywords: X-Ray photoelectron spectroscopy, ion scatering spectroscopy, electron spectroscopy, reflection electron energy loss spectroscopy, Angle Resolved XPS (ARXPS)

Description: Device for multiplication of holograms

Technical specification: Multiplication of optical security marks on silicone paper and multilayer polymeric film. Formation temperature in the range of 70-180 ºC. The width of the tape 106 mm. The length of the tape 1000 m.

Usage area: Fabrication of optical document security intellectual property measures with micro-diffractive elements.

Keywords: Document security

Description: Scanning electron microscope

Technical specification: Resolution in high vacuum up to 1.2 nm (30 kV, SE), up to 2.5 nm (30 kV, BSE) and up to 3 nm (1 kV, SE). Three available vacuum regimes: high vacuum (<6E-4 Pa), low vacuum (10-130 Pa), ESEM (10-4000 Pa). Conductive and isolating samples can be investigated.

Usage area: Sample vizualization

Keywords: Microscope, magnification, visualization, scanning electron microscope, SEM, electron microscope, secondary electrons, back scattered electrons, environmental SEM, ESEM, field emission gun, FEG

Description: Spectroscopic ellipsometer

Technical specification: Spectroscopic ellipsometer covers UV-VIS-NIR spectral range. Available angles for measurements 12-90 deg with 0.01 deg resolution. Possibility to measure with focused beam 70x150 um. High resolution UV-VIS detector covers 190-900 nm range with 0.5 nm resolution, fast UV-VIS detector covers spectral range of 190-900 nm (1024 wavelengths), high resolution NIR detector 800-2000 nm with 3 nm resolution. Automated sample positioning with sample visualization via digital camera.

Usage area: Device is feasible to analyse optical constants (k(λ), n(λ)), thickness of thin isotropic and anisotropic transparent and non-transparent layers on isotropic and anisotropic transparent and non-transparent substrates. It can be also used for evaluations of periodical structures (scatterometry) and absorption kinetics in liquids.

Keywords: Spectroscopic ellipsometer, optical constants, refractive index, absorption coefficient, extinction, dispersion, dispersion curve, thickness determination, ellispometer

Description: Laser ellipsometer L115

Technical specification: Length of the light wave used is 632.8 nm. Thickness of films possible for analysis is 0.001 - 1 µm. Uncertainty of thickness measurements is ±(0.5 – 1) nm. Accuracy of the refractive index measurements ±0.01.

Usage area: Measurements of refractive index and thickness of the dielectric and semiconducting thin films, semitransparent thin metal films (< 50 nm), polymeric thin films (e.g. photo resist).

Keywords: Laser ellipsometer, thin films, thickness, refraction index

Description: Raman scattering spectrometer Renishaw in Via Spectrometer with accessories

Technical specification: 532 nm, 45 mW semiconductor laser awaking 2400 lines / mm grating, termoelektriškai 1024 pixels cooled CCD Stokes lines measuring range from 100 cm-1 to 8000 cm-1 resolution - better than 1 cm -1. Leica confocal microscope with 3 lenses x20, x50 and x100.

Usage area: Raman scattering spectroscopy can be used for thin layers of powder and aqueous solutions of the investigation. In addition to information about the structure of materials, Raman spectroscopy can be used for some types of stress in thin layers of review. Software complex for Raman scattering spectra in the confocal micro-Raman optical system and luminescence measurements.

Keywords: Raman spectroscopy, materials research, identification

Description: Scanning probe microscopy system JPK NanoWizard 3

Technical specification: Operating modes: contact, intermittent contact or AC or tapping, non-contact, lateral force microscopy, Phase imaging; Force mapping; Quantitative imaging: images of the surface force curve, the force-distance spectroscopy of force-distance volumetric imaging mode, conductivity microscopy. Scanning field 100x100 μm height up to 15 μm.

Usage area: For measurements of the surface topography and the mechanical, electrical and magnetic properties in the air and fluids. For solids, polymers, biological samples and molecular characterization, nanomanipulation and nanolithography. Development and research of advanced new materials and thin films; control of technological processes at the nano-scale.

Keywords: AFM, atomic force microscopy, topography, morphology, nanolithography, nanotechnology, microscopy

Description: Mask aligner and nanoimprint lithography

Technical specification: UV400: 350-450 nm; UV300: 280-350 nm; UV250: 240-260 nm. UV nanoimprint lithography, soft and hard contact, photomask size 102x102 and 127x127 mm.

Usage area: Mask alignement, UV exposure, nanoimprint lithography

Keywords: UV light, exposure, photolithography, optical lithography, nanoimprint lithography,

Description: picoammeter / bias source

Technical specification: bias /- 500V current 100 fA - 20 mA

Usage area: I-V measurements

Keywords: I-V measurements

Description: X-ray diffractometer D8 Discover, Bruker

Technical specification: Specification: 2.2 kW X-ray tube with Cu anode. Parallel beam/ Bragg-Brentano geometry, Göbel mirror, 2xGe(022) crystal monochromator, rotary absorber, scintillation detector, 1D LynxEye detector, Eulerian cradle (X, Y, Z, Psi, Phi), Chi ir Xi motorized positioning table, X-ray reflectivity acessory, motorized slit accessory, PATHFINDER optics.

Usage area: Qualitative and quantitative analysis of chemical compounds; Ab initio-crystal structure of chemical compounds to identify and clarify; Material microstructure analysis (crystallite sizes, micro-stress, to determine the degree of crystallinity); X-ray diffraction measurements at a sliding angle of the focused (GID); Micro-Diffraction measurements; Small reflectometry and high resolution

Keywords: X-ray diffraction, structure, thin layers, analysis of chemical compounds

Description: ICP deep reactive etching system,

Technical specification: Homogeneous etching area diameter 15 cm

Usage area: deep reactive ion etching, bulkmicrofabrication

Keywords: deep reactive ion etching, bulkmicrofabrication

Results of services (45)

Description: null

Keywords: Microsystems

Description: null

Keywords: Optical and nanoimprint lithography

Description: null

Keywords: Electron beam lithography

Description: null

Keywords: lateral, magnetic, electric forces microscopy, mapping, mechanical properties, nanotechnology

Description: We can make products from stickers (in many different shapes of self-decaying seals) to difficult optic changing holograms. We do: projecting holographic signs and manufacturing of original; manufacturing of metal stamp; micro relief on metal polymeric band; making an adhesive layer and cutting holographic sticker in shape you need. Products are made in high technologies: interference holographic lithography, electronic nano–lithography, optic micro lithography, vacuum and electrochemical covers and other modern equipment and technology.

Keywords: Holographic

Description: null

Keywords: surface, nonostructures, nonocomposites, thin films

Description: null

Keywords: metal, dielectric, semiconductor, thin films, deposition by vacuum, plasma and ion assisted methods and investigations; structure, mechanical,electrical and optical properties

Description: null

Keywords: antireflective films

Description: null

Keywords: semiconductor, surface, passivation

Description: null

Keywords: diamond like carbon

Description: null

Keywords: Schottky contacts, ohmic contacts

Description: null

Keywords: vacuum evaporation, magnetron sputtering, ion beam synthesis, RF PECVD, MW PECVD

Description: The service provides original hologram fabrication in light sensitive recording media forming sub-micrometer size dimensional variable relief structures (or variable refractive index structures) for document security and brand authentication. Holograms are recorded using the physical object (model) or computer graphics supplied by the customer. Three-dimensional holograms (3D), 2D/ D holograms, hidden image holograms and combined hologram of high degree of protection recording are fabricated using optical tables, optical-mechanical components, controls, lasers and other devices. Combined hologram recording can be made by combining: a) 3D electron beam lithography with 2D/3D holograms, b) dot-matrix holograms with 2D / 3D holograms, c) 2D/3D holograms with hidden image holograms and so on.

Keywords: Laser interference lithography, hologram origination

Description: null

Keywords: Dot-matrix hologram, photoresist

Description: null

Keywords: microfabrication

Description: null

Keywords: transient absorbtion

Description: null

Keywords: Centrifuge, spin coater

Description: null

Keywords: Langmuir-Blodgett method

Description: null

Keywords: Optical microscope

Description: null

Keywords: Electron beam lithography

Description: null

Keywords: Laser ellipsometer

Description: null

Keywords: Evaporation of metal films

Description: null

Keywords: diamond like carbon

Description: null

Keywords: electrical properties

Description: null

Keywords: piezoresistive properties

Description: null

Keywords: Microhardness and other micromechanical properties

Description: null

Keywords: Rockwell hardness

Description: null

Keywords: reactive ion etching

Description: null

Keywords: ion beam etchingh

Description: null

Keywords: deep reactive ion etching

Description: null

Keywords: Clean room

Description: null

Keywords: X-Ray photoelectron spectroscopy, Auger electron spectroscopy

Description: null

Keywords: microscopy

Description: null

Keywords: chemical composition

Description: null

Keywords: transmission, reflection

Description: null

Keywords: chemical bonds identefication

Description: null

Keywords: identefication

Description: null

Keywords: concentration

Description: null

Keywords: conductivity, impedance spectroscopy, DC measurements

Description: null

Keywords: Galvanoplastic

Description: null

Keywords: Adhesive layer formation

Description: null

Keywords: Surface roughness measurements

Description: null

Keywords: Micro-relief

Description: null

Keywords: Document security